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| Datasheet File OCR Text: |
| P-Channel JFET Switch CORPORATION 2N5114 - 2N5116 GENERAL DESCRIPTION Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and 10VAC signals can be handled using only +5V logic (TTL or CMOS). FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +200oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. * Low ON Resistance * ID(off)<500pA * Switches directly from TTL Logic PIN CONFIGURATION ORDERING INFORMATION TO-18 Part Package Temperature Range -55oC to +200oC -55oC to +200oC 2N5114-16 Hermetic TO-18 X2N5114-16 Sorted Chips in Carriers D 5508 G,C S SWITCHING CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL td tr toff tf PARAMETER Turn-ON Delay Time Rise Time (Note 2) Turn-OFF Delay Time (Note 2) Fall Time (Note 2) 2N5114 MAX 6 10 6 15 2N5115 MAX 10 20 8 30 2N5116 MAX 12 30 10 50 ns UNITS ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL BVGSS IGSS PARAMETER Gate-Source Breakdown Voltage Gate Reverse Current 2N5114 MIN MAX 30 500 1.0 -500 ID(off) Drain Cutoff Current -1.0 Gate-Source Pinch-Off Voltage 5 10 3 -1.0 6 1 -1.0 4 2N5115 MIN MAX 30 500 1.0 -500 2N5116 MIN MAX 30 500 1.0 -500 UNITS V pA A pA A V TEST CONDITIONS IG = 1A, VDS = 0 VGS = 20V, VDS = 0 TA 150oC VDS = -15V VGS = 12V (2N5114) VGS = 7V (2N5115) VGS = 5V (2N5116) VDS = -15V, ID = -1nA VP 2N5114 - 2N5116 CORPORATION ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) (Continued) SYMBOL PARAMETER Drain Current at Zero Gate Voltage (Note 1) Forward Gate-Source Voltage Drain-Source ON Voltage Static Drain-Source ON Resistance Small-Signal Drain-Source ON Resistance Common-Source Input Capacitance (Note 2) Common-Source Reverse Transfer Capacitance (Note 2) 2N5114 MIN MAX -30 -90 -1 -1.3 75 75 25 2N5115 MIN MAX -15 -60 -1 -0.8 100 100 25 2N5116 MIN MAX -5 -25 -1 -0.6 150 150 25 pF 7 7 7 V UNITS TEST CONDITIONS VGS = -0 VDS = -18V (2N5114) VDS = -15V (2N5115) VDS = -15V (2N5116) IG = -1mA, VDS = 0 VGS = 0 ID = -15mA (2N5114) ID = -7mA (2N5115) ID = -3mA (2N5116) VGS = 0, I D = -1mA VGS = 0, I D = 0, f = 1kHz VDS = -15V, VGS = 0, f = 1mHz VDS = 0 VGS = 12V (2N5114) VGS = 7V (2N5115) VGS = 5V (2N5116) f = 1mHz IDSS VGS(f) VDS(on) rDS(on) rds(on) Ciss mA Crss NOTES 1. Pulse test; duration = 2ms. 2. For design reference only, not 100% tested. VGG VDD TEST CONDITIONS 2N5114 VDD VGG RL RG ID(ON) VIN -10V 20V 430 100 -15mA -12V 2N5115 -6V 12V 910 220 -7mA -7V 2N5116 -6V 8V 2K 390 -6V VDS(ON) VIN td 10% INPUT 1.2K RL 90% tOFF tr 90% 10% tr OUTPUT 0040 0.1F VIN RG 51 1.2K 7.5K 10% 51 SAMPLING SCOPE 51 -3mA -5V SAMPLING SCOPE RISE TIME 0.4ns INPUT RESISTANCE 10M INPUT CAPACITANCE 1.5pF 0050 TYPICAL PERFORMANCE CHARACTERISTICS Vp vs rDS(ON) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 Vp vs IDSS 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 Vp vs g fs 2.0 VDS = 0.1V VGS = 0 2.0 VDS = 20V VGS = 0 (pulsed) 2.0 VDS = 20V VGS = 0 (pulsed) Vp (V) Vp (V) 1.0 0.9 0.8 0.7 0.6 0.5 10 30 100 300 1,000 1.0 0.9 0.8 0.7 0.6 0.5 1 3 10 30 100 Vp (V) 1.0 0.9 0.8 0.7 0.6 0.5 1,000 3,000 10,000 30,000 100,000 rDS(ON) (ohms) 0060 t DSS (mA) 0070 g fs (V) 0080 |
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